STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 72 A, 650 V Enhancement, 3-Pin TO-247

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

3 393,87 kr

(exkl. moms)

4 242,33 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 510 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 - 60113,129 kr3 393,87 kr
90 - 120108,831 kr3 264,93 kr
150 +107,359 kr3 220,77 kr

*vägledande pris

RS-artikelnummer:
225-0678
Tillv. art.nr:
STWA68N65DM6AG
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

MDmesh DM6

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

118nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

480W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

5.1mm

Standards/Approvals

No

Width

15.8 mm

Length

40.92mm

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

629

relaterade länkar