STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 204-3947
- Tillv. art.nr:
- STW50N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
1 833,45 kr
(exkl. moms)
2 291,82 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 08 juni 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 61,115 kr | 1 833,45 kr |
| 120 - 240 | 59,465 kr | 1 783,95 kr |
| 270 - 480 | 57,90 kr | 1 737,00 kr |
| 510 - 990 | 56,411 kr | 1 692,33 kr |
| 1020 + | 55,007 kr | 1 650,21 kr |
*vägledande pris
- RS-artikelnummer:
- 204-3947
- Tillv. art.nr:
- STW50N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | DM6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52.5nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series DM6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52.5nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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