STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247 STW50N65DM6
- RS-artikelnummer:
- 204-3948
- Tillv. art.nr:
- STW50N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
180,32 kr
(exkl. moms)
225,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 22 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 90,16 kr | 180,32 kr |
| 10 + | 77,505 kr | 155,01 kr |
*vägledande pris
- RS-artikelnummer:
- 204-3948
- Tillv. art.nr:
- STW50N65DM6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | DM6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 52.5nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series DM6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 52.5nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
relaterade länkar
- STMicroelectronics DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6AG
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STW42N65M5
- STMicroelectronics MDmesh DM6 Type N-Channel MOSFET 650 V Enhancement, 8-Pin ACEPACK SMIT SH63N65DM6AG
- STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTW90 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247