Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON
- RS-artikelnummer:
- 223-8519
- Tillv. art.nr:
- IPG20N06S2L65AATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
17 205,00 kr
(exkl. moms)
21 505,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 3,441 kr | 17 205,00 kr |
*vägledande pris
- RS-artikelnummer:
- 223-8519
- Tillv. art.nr:
- IPG20N06S2L65AATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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