Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220 IPP60R022S7XKSA1

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108,55 kr

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135,69 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4924
Tillv. art.nr:
IPP60R022S7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Series

IPP60R

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

390W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.36mm

Height

9.45mm

Width

4.57 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.

Minimize conduction losses

Increase energy efficiency

More compact and easier designs

Eliminate or reduce heat sink in solid state design

Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

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