Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220

RS-artikelnummer:: 171-1920
Tillv. art.nr:: SPA20N60C3XKSA1
Tillverkare / varumärke:: Infineon

Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220

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Antal (1 förpackning med 2 enheter)*

84,67 kr

(exkl. moms)

105,838 kr

(inkl. moms)

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Dessutom levereras 116 enhet(er) från den 05 januari 2026

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Enheter	Per enhet	Per förpackning*
2 - 8	42,335 kr	84,67 kr
10 - 18	40,265 kr	80,53 kr
20 - 48	36,23 kr	72,46 kr
50 - 98	32,59 kr	65,18 kr
100 +	30,91 kr	61,82 kr

*vägledande pris

RS-artikelnummer:: 171-1920
Tillv. art.nr:: SPA20N60C3XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20.7A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	SPA20N60C3
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	34.5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	87nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	16.15mm
	Standards/Approvals	No
	Width	4.85 mm
	Length	10.65mm
	Distrelec Product Id	304-30-528
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20.7A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series SPA20N60C3
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 34.5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 87nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 16.15mm
	Standards/Approvals No
	Width 4.85 mm
	Length 10.65mm
	Distrelec Product Id 304-30-528
	Automotive Standard No

RoHS-status: Undantagen

Infineon MOSFET

The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of use

• Field proven CoolMOM quality

• High efficiency and power density

• High peak current capability

• High reliability

• Improved transconductance

• Lead (Pb) free

• Low gate charge (Qg)

• Low specific on state resistance

• Operating temperature ranges between -55°C and 150°C

• Outstanding cost/performance

• Periodic avalanche rated

• Ultra low gate charge

• Very low energy storage in output capacitance (Eoss) 400V

Applications

• Adapter

• PC power

• Server power supplies

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC