Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

3 181,35 kr

(exkl. moms)

3 976,70 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 350 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
50 - 5063,627 kr3 181,35 kr
100 - 10060,446 kr3 022,30 kr
150 +56,627 kr2 831,35 kr

*vägledande pris

RS-artikelnummer:
222-4923
Tillv. art.nr:
IPP60R022S7XKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

IPP60R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

390W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

150°C

Height

9.45mm

Width

4.57 mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.

Minimize conduction losses

Increase energy efficiency

More compact and easier designs

Eliminate or reduce heat sink in solid state design

Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

relaterade länkar