DiodesZetex Dual DMN Type N-Channel MOSFET, 250 mA, 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
- RS-artikelnummer:
- 222-2840
- Tillv. art.nr:
- DMN33D8LDWQ-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
61,15 kr
(exkl. moms)
76,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 950 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 2,446 kr | 61,15 kr |
| 50 - 75 | 2,401 kr | 60,03 kr |
| 100 - 225 | 1,223 kr | 30,58 kr |
| 250 - 975 | 1,21 kr | 30,25 kr |
| 1000 + | 1,075 kr | 26,88 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2840
- Tillv. art.nr:
- DMN33D8LDWQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Maximum Power Dissipation Pd | 0.35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.95mm | |
| Length | 2.15mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Maximum Power Dissipation Pd 0.35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.95mm | ||
Length 2.15mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected
relaterade länkar
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMN3401LDWQ-7
- DiodesZetex Dual 2 Type P-Channel MOSFET 6-Pin SOT-363