DiodesZetex DMN Type N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-323
- RS-artikelnummer:
- 222-2832
- Tillv. art.nr:
- DMN2710UW-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
1 164,00 kr
(exkl. moms)
1 455,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 0,388 kr | 1 164,00 kr |
| 9000 - 42000 | 0,327 kr | 981,00 kr |
| 45000 + | 0,291 kr | 873,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2832
- Tillv. art.nr:
- DMN2710UW-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1.1mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
relaterade länkar
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UW-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UWQ-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2310UW-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2310UWQ-7
- DiodesZetex Dual DMN Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363