DiodesZetex DMG1012UWQ Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 3-Pin SOT-323
- RS-artikelnummer:
- 222-2824
- Tillv. art.nr:
- DMG1012UWQ-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
2 160,00 kr
(exkl. moms)
2 700,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 0,72 kr | 2 160,00 kr |
| 9000 + | 0,605 kr | 1 815,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2824
- Tillv. art.nr:
- DMG1012UWQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG1012UWQ | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 0.29W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG1012UWQ | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 0.29W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
relaterade länkar
- DiodesZetex DMG1012UWQ Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMG1012UWQ-7
- DiodesZetex DMN62 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UW-7
- DiodesZetex DMN62 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-323 DMN62D0UWQ-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMN2710UWQ-7
- DiodesZetex DMP31 Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMP2900 Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
