Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252

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11 988,00 kr

(exkl. moms)

14 984,00 kr

(inkl. moms)

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  • Dessutom levereras 10 000 enhet(er) från den 29 december 2025
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2000 - 20005,994 kr11 988,00 kr
4000 +5,844 kr11 688,00 kr

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RS-artikelnummer:
220-7493
Tillv. art.nr:
IRFR3504ZTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39 mm

Height

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below <100kHz

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High performance in low frequency applications

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