Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

RS-artikelnummer:: 220-7490
Tillv. art.nr:: IRFR1010ZTRPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

133,36 kr

(exkl. moms)

166,70 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 2 570 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
10 - 90	13,336 kr	133,36 kr
100 - 240	12,667 kr	126,67 kr
250 - 490	12,13 kr	121,30 kr
500 - 990	11,603 kr	116,03 kr
1000 +	10,797 kr	107,97 kr

*vägledande pris

RS-artikelnummer:: 220-7490
Tillv. art.nr:: IRFR1010ZTRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	366W
	Typical Gate Charge Qg @ Vgs	460nC
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Width	5.31 mm
	Standards/Approvals	No
	Height	20.7mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 366W
	Typical Gate Charge Qg @ Vgs 460nC
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Width 5.31 mm
	Standards/Approvals No
	Height 20.7mm
	Automotive Standard No

Datasheet - IRFR1010ZTRPBF

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

GRATIS leverans för online beställningar över 500,00 kr

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