Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF
- RS-artikelnummer:
- 220-7496
- Tillv. art.nr:
- IRFR3709ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
174,94 kr
(exkl. moms)
218,68 kr
(inkl. moms)
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- Dessutom levereras 1 160 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 8,747 kr | 174,94 kr |
| 100 - 180 | 8,305 kr | 166,10 kr |
| 200 - 480 | 7,958 kr | 159,16 kr |
| 500 - 980 | 7,605 kr | 152,10 kr |
| 1000 + | 7,09 kr | 141,80 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7496
- Tillv. art.nr:
- IRFR3709ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
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