Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF

RS-artikelnummer:: 220-7470
Tillv. art.nr:: IRF3007STRLPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF

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Antal (1 förpackning med 5 enheter)*

146,05 kr

(exkl. moms)

182,55 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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585 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
5 - 20	29,21 kr	146,05 kr
25 - 45	26,298 kr	131,49 kr
50 - 120	24,528 kr	122,64 kr
125 - 245	22,804 kr	114,02 kr
250 +	21,348 kr	106,74 kr

*vägledande pris

RS-artikelnummer:: 220-7470
Tillv. art.nr:: IRF3007STRLPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12.6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	120W
	Typical Gate Charge Qg @ Vgs	89nC
	Forward Voltage Vf	1.3V
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12.6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 120W
	Typical Gate Charge Qg @ Vgs 89nC
	Forward Voltage Vf 1.3V
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

Datasheet - IRF3007STRLPBF

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF

GRATIS leverans för online beställningar över 500,00 kr

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