Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223

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7 317,00 kr

(exkl. moms)

9 147,00 kr

(inkl. moms)

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3000 - 30002,439 kr7 317,00 kr
6000 +2,317 kr6 951,00 kr

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RS-artikelnummer:
220-7436
Tillv. art.nr:
IPN60R600P7SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-223

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

7W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

9nC

Width

3.7 mm

Standards/Approvals

No

Length

6.7mm

Height

1.8mm

Automotive Standard

No

The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).

Ease of use and fast design-in through low ringing tendency and usage

across PFC and PWM stages

Simplified thermal management due to low switching and conduction

losses

Increased power density solutions enabled by using product swith

smaller foot print and higher manufacturing quality due to>2kVESD

protection

Suitable for awide variety of applications and power ranges

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