Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1
- RS-artikelnummer:
- 219-6003
- Tillv. art.nr:
- IPN80R900P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
116,05 kr
(exkl. moms)
145,06 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 2 380 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 11,605 kr | 116,05 kr |
| 50 - 90 | 11,032 kr | 110,32 kr |
| 100 - 240 | 10,562 kr | 105,62 kr |
| 250 - 490 | 10,091 kr | 100,91 kr |
| 500 + | 9,397 kr | 93,97 kr |
*vägledande pris
- RS-artikelnummer:
- 219-6003
- Tillv. art.nr:
- IPN80R900P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 7W | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
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