Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK
- RS-artikelnummer:
- 220-7434
- Tillv. art.nr:
- IPL60R360P6SATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
34 900,00 kr
(exkl. moms)
43 600,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 5 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 6,98 kr | 34 900,00 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7434
- Tillv. art.nr:
- IPL60R360P6SATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89.3W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89.3W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Automotive Standard No | ||
The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.
Extremely low losses due to very low FOMRdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-freeplating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC
relaterade länkar
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263