Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON IPC100N04S5L1R1ATMA1

RS-artikelnummer:: 220-7400
Tillv. art.nr:: IPC100N04S5L1R1ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON IPC100N04S5L1R1ATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

107,28 kr

(exkl. moms)

134,10 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 9 995 enhet(er) från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
5 - 20	21,456 kr	107,28 kr
25 - 45	17,584 kr	87,92 kr
50 - 120	16,33 kr	81,65 kr
125 - 245	15,21 kr	76,05 kr
250 +	14,156 kr	70,78 kr

*vägledande pris

RS-artikelnummer:: 220-7400
Tillv. art.nr:: IPC100N04S5L1R1ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	150W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	105nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	5.25mm
	Height	1.1mm
	Width	5.58 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 150W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 105nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 5.25mm
	Height 1.1mm
	Width 5.58 mm
	Automotive Standard AEC-Q101

Datasheet - IPC100N04S5L1R1ATMA1

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

OptiMOS™ - power MOSFET for automotive applications

N-channel - Enhancement mode - Logic Level

MSL1 up to 260°C peak reflow

175°C operating temperature

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON IPC100N04S5L1R1ATMA1

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar