Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON

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51 055,00 kr

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63 820,00 kr

(inkl. moms)

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5000 +10,211 kr51 055,00 kr

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RS-artikelnummer:
220-7351
Tillv. art.nr:
BSC028N06NSTATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.2mm

Length

5.35mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Enhanced 175°C capability in SuperSO8

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness

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