Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 87 A, 650 V Enhancement, 3-Pin TO-220 IPA60R125P6XKSA1
- RS-artikelnummer:
- 220-7370
- Tillv. art.nr:
- IPA60R125P6XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
87,58 kr
(exkl. moms)
109,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 244 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 43,79 kr | 87,58 kr |
| 10 - 18 | 38,53 kr | 77,06 kr |
| 20 - 48 | 35,95 kr | 71,90 kr |
| 50 - 98 | 33,825 kr | 67,65 kr |
| 100 + | 24,08 kr | 48,16 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7370
- Tillv. art.nr:
- IPA60R125P6XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P6 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P6 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Reduced gate charge (Q g)
Higher V the
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
High robustness and better efficiency
Outstanding quality & reliability
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