Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON
- RS-artikelnummer:
- 220-7353
- Tillv. art.nr:
- BSC061N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
35 590,00 kr
(exkl. moms)
44 490,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 25 maj 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 7,118 kr | 35 590,00 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7353
- Tillv. art.nr:
- BSC061N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for high performance SMPS ,e.g. sync.rec.
100%avalanchetested
Superior thermal resistance
N-channel
QualifiedaccordingtoJEDEC1)for target applications
Pb-free lead plating; RoHS compliant
Halogen-freeaccordingtoIEC61249-2-21
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