Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSTATMA1
- RS-artikelnummer:
- 220-7352
- Tillv. art.nr:
- BSC028N06NSTATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
137,09 kr
(exkl. moms)
171,36 kr
(inkl. moms)
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- Dessutom levereras 1 925 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 27,418 kr | 137,09 kr |
| 50 - 120 | 23,834 kr | 119,17 kr |
| 125 - 245 | 22,198 kr | 110,99 kr |
| 250 - 495 | 20,832 kr | 104,16 kr |
| 500 + | 19,196 kr | 95,98 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7352
- Tillv. art.nr:
- BSC028N06NSTATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
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