Infineon CoolMOS P7 Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1
- RS-artikelnummer:
- 219-5997
- Tillv. art.nr:
- IPN80R4K5P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
154,125 kr
(exkl. moms)
192,65 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 600 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 6,165 kr | 154,13 kr |
| 125 - 225 | 5,851 kr | 146,28 kr |
| 250 - 600 | 5,609 kr | 140,23 kr |
| 625 - 1225 | 5,362 kr | 134,05 kr |
| 1250 + | 4,314 kr | 107,85 kr |
*vägledande pris
- RS-artikelnummer:
- 219-5997
- Tillv. art.nr:
- IPN80R4K5P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
relaterade länkar
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R600P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R750P7ATMA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223