Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-263 IRF9530NSTRLPBF
- RS-artikelnummer:
- 215-2593
- Tillv. art.nr:
- IRF9530NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
178,76 kr
(exkl. moms)
223,44 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 760 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 8,938 kr | 178,76 kr |
| 100 - 180 | 8,49 kr | 169,80 kr |
| 200 - 480 | 8,136 kr | 162,72 kr |
| 500 - 980 | 7,777 kr | 155,54 kr |
| 1000 + | 7,235 kr | 144,70 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2593
- Tillv. art.nr:
- IRF9530NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-39-418 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-39-418 | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
relaterade länkar
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF9540NSTRLPBF