Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 215-2592
- Tillv. art.nr:
- IRF9530NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 800 enheter)*
3 517,60 kr
(exkl. moms)
4 396,80 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 - 800 | 4,397 kr | 3 517,60 kr |
| 1600 - 1600 | 4,177 kr | 3 341,60 kr |
| 2400 + | 3,913 kr | 3 130,40 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2592
- Tillv. art.nr:
- IRF9530NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
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