Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K0P7ATMA1
- RS-artikelnummer:
- 215-2514
- Tillv. art.nr:
- IPD80R2K0P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
127,18 kr
(exkl. moms)
158,98 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 480 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 6,359 kr | 127,18 kr |
| 100 - 180 | 4,96 kr | 99,20 kr |
| 200 - 480 | 4,642 kr | 92,84 kr |
| 500 - 980 | 4,324 kr | 86,48 kr |
| 1000 + | 4,006 kr | 80,12 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2514
- Tillv. art.nr:
- IPD80R2K0P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 24W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 24W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
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