Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262
- RS-artikelnummer:
- 214-9065
- Tillv. art.nr:
- IPI80N06S407AKSA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
388,85 kr
(exkl. moms)
486,05 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 350 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 7,777 kr | 388,85 kr |
| 100 - 200 | 7,567 kr | 378,35 kr |
| 250 - 450 | 7,367 kr | 368,35 kr |
| 500 - 950 | 7,179 kr | 358,95 kr |
| 1000 + | 7,00 kr | 350,00 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9065
- Tillv. art.nr:
- IPI80N06S407AKSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-262 | |
| Series | OptiMOS-T2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 23.45mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-262 | ||
Series OptiMOS-T2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 23.45mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
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