Infineon CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 214-8999
- Tillv. art.nr:
- IPA60R280P7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
1 007,20 kr
(exkl. moms)
1 259,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 300 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 20,144 kr | 1 007,20 kr |
| 100 - 200 | 16,115 kr | 805,75 kr |
| 250 - 450 | 15,109 kr | 755,45 kr |
| 500 - 950 | 14,101 kr | 705,05 kr |
| 1000 + | 13,093 kr | 654,65 kr |
*vägledande pris
- RS-artikelnummer:
- 214-8999
- Tillv. art.nr:
- IPA60R280P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Excellent ESD robustness >2kV (HBM) for all products
Suitable for hard and soft switching due to an outstanding commutation ruggedness
relaterade länkar
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