Infineon CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220

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1 710,35 kr

(exkl. moms)

2 137,95 kr

(inkl. moms)

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  • 500 enhet(er) levereras från den 29 januari 2026
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50 - 5034,207 kr1 710,35 kr
100 - 20032,496 kr1 624,80 kr
250 +30,444 kr1 522,20 kr

*vägledande pris

RS-artikelnummer:
214-8993
Tillv. art.nr:
IPA60R060P7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Excellent ESD robustness >2kV (HBM) for all products

Suitable for hard and soft switching due to an outstanding commutation ruggedness

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