Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-220 IPA60R180P7SXKSA1

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117,09 kr

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146,36 kr

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Enheter
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10 - 4011,709 kr117,09 kr
50 - 9011,133 kr111,33 kr
100 - 24010,662 kr106,62 kr
250 - 49010,181 kr101,81 kr
500 +9,486 kr94,86 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
214-8996
Tillv. art.nr:
IPA60R180P7SXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Excellent ESD robustness >2kV (HBM) for all products

Suitable for hard and soft switching due to an outstanding commutation ruggedness

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