Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262

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Antal (1 rör med 50 enheter)*

285,45 kr

(exkl. moms)

356,80 kr

(inkl. moms)

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50 +5,709 kr285,45 kr

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RS-artikelnummer:
214-4447
Tillv. art.nr:
IRF3205ZLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-262

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

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