Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZS

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RS-artikelnummer:
165-7623
Tillv. art.nr:
AUIRF3205ZS
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

11.3mm

Length

10.67mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

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