Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180P7XKSA1
- RS-artikelnummer:
- 214-4416
- Tillv. art.nr:
- IPP60R180P7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
143,97 kr
(exkl. moms)
179,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 340 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 10 | 14,397 kr | 143,97 kr |
| 20 - 40 | 13,675 kr | 136,75 kr |
| 50 - 90 | 13,104 kr | 131,04 kr |
| 100 - 240 | 12,522 kr | 125,22 kr |
| 250 + | 11,659 kr | 116,59 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4416
- Tillv. art.nr:
- IPP60R180P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 72W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Width | 15.93 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 72W | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Width 15.93 mm | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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