Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1

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143,00 kr

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178,80 kr

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20 +7,15 kr143,00 kr

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RS-artikelnummer:
214-4402
Tillv. art.nr:
IPN80R1K4P7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-223

Series

800V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

7W

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

1.8mm

Width

3.7 mm

Length

6.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

It has fully optimised portfolio

It has lower assembly cost

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