DiodesZetex Dual DMN2024UFX 1 Type N-Channel MOSFET, 8 A, 20 V Enhancement, 4-Pin VDFN DMN2024UFX-7
- RS-artikelnummer:
- 213-9158
- Tillv. art.nr:
- DMN2024UFX-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
132,425 kr
(exkl. moms)
165,525 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 5,297 kr | 132,43 kr |
| 50 - 75 | 5,201 kr | 130,03 kr |
| 100 - 225 | 4,632 kr | 115,80 kr |
| 250 - 975 | 4,543 kr | 113,58 kr |
| 1000 + | 3,71 kr | 92,75 kr |
*vägledande pris
- RS-artikelnummer:
- 213-9158
- Tillv. art.nr:
- DMN2024UFX-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2024UFX | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.22Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.8mm | |
| Width | 5 mm | |
| Standards/Approvals | UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 | |
| Length | 2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2024UFX | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.22Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.8mm | ||
Width 5 mm | ||
Standards/Approvals UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 | ||
Length 2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The DiodesZetex DMN2024UFX series is dual N-channel MOSFET. It is used in general purpose interfacing switch and power management functions.
Low on-resistance
ESD protected gate
relaterade länkar
- DiodesZetex Dual DMN2024UFX 1 Type N-Channel MOSFET 20 V Enhancement, 4-Pin VDFN
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030
- DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET 100 V Enhancement, 12-Pin VDFN
- DiodesZetex Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin VDFN
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- DiodesZetex Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13
- DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13