DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET, 6 A, 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13
- RS-artikelnummer:
- 213-9147
- Tillv. art.nr:
- DMHT10H032LFJ-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
203,50 kr
(exkl. moms)
254,40 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 20,35 kr | 203,50 kr |
| 50 - 90 | 19,947 kr | 199,47 kr |
| 100 - 240 | 17,797 kr | 177,97 kr |
| 250 - 990 | 17,438 kr | 174,38 kr |
| 1000 + | 14,235 kr | 142,35 kr |
*vägledande pris
- RS-artikelnummer:
- 213-9147
- Tillv. art.nr:
- DMHT10H032LFJ-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | VDFN | |
| Series | DMHT10H032LFJ | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 64W | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 5mm | |
| Height | 0.8mm | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type VDFN | ||
Series DMHT10H032LFJ | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 64W | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 5mm | ||
Height 0.8mm | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
The DiodesZetex DMHT10H032LFJ series is a N-channel MOSFET in a H-bridge configuration.
High conversion efficiency
Fast switching speed
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