DiodesZetex DMT Type N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS-artikelnummer:
- 222-2881
- Tillv. art.nr:
- DMT64M8LCG-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
98,52 kr
(exkl. moms)
123,15 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 620 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 9,852 kr | 98,52 kr |
| 50 - 90 | 9,632 kr | 96,32 kr |
| 100 - 240 | 7,538 kr | 75,38 kr |
| 250 - 990 | 6,966 kr | 69,66 kr |
| 1000 + | 6,787 kr | 67,87 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2881
- Tillv. art.nr:
- DMT64M8LCG-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 2.16W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Width | 0.8 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 2.16W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Width 0.8 mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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