STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT

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452 004,00 kr

(exkl. moms)

565 005,00 kr

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RS-artikelnummer:
213-3941
Tillv. art.nr:
SCTL35N65G2V
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerFLAT

Series

SCTL35N65G2V

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

417W

Forward Voltage Vf

3.3V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

175°C

Height

0.95mm

Standards/Approvals

No

Length

8.1mm

Width

8.1 mm

Automotive Standard

No

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

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