STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6
- RS-artikelnummer:
- 210-8740
- Tillv. art.nr:
- STD12N60DM6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
102,82 kr
(exkl. moms)
128,525 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 27 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 20,564 kr | 102,82 kr |
| 50 - 95 | 17,562 kr | 87,81 kr |
| 100 - 245 | 13,798 kr | 68,99 kr |
| 250 - 995 | 13,462 kr | 67,31 kr |
| 1000 + | 9,946 kr | 49,73 kr |
*vägledande pris
- RS-artikelnummer:
- 210-8740
- Tillv. art.nr:
- STD12N60DM6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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