STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13N60DM2

Se alla MOSFETs

Antal (1 förpackning med 5 enheter)*

93,01 kr

(exkl. moms)

116,26 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 2 480 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
5 +18,602 kr93,01 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
188-8407
Tillv. art.nr:
STD13N60DM2
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

12.5nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.17mm

Standards/Approvals

No

Length

6.6mm

Width

6.2 mm

Automotive Standard

No

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

relaterade länkar