DiodesZetex DMP2900 Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-323 DMP2900UW-7
- RS-artikelnummer:
- 206-0113
- Tillv. art.nr:
- DMP2900UW-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
1 704,00 kr
(exkl. moms)
2 130,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 20 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 0,568 kr | 1 704,00 kr |
| 9000 - 42000 | 0,545 kr | 1 635,00 kr |
| 45000 + | 0,532 kr | 1 596,00 kr |
*vägledande pris
- RS-artikelnummer:
- 206-0113
- Tillv. art.nr:
- DMP2900UW-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP2900 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 0.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.9mm | |
| Width | 1.8 mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP2900 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 0.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.9mm | ||
Width 1.8 mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6V with 0.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
relaterade länkar
- DiodesZetex DMP2900 Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMP31 Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMP2165UW Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMP2165UW Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323 DMP2165UW-7
- DiodesZetex DMP31 Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323 DMP31D7LW-7
- DiodesZetex DMN62 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN2055UWQ Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-323
- DiodesZetex DMN3061SW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-323
