Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3
- RS-artikelnummer:
- 204-7222
- Tillv. art.nr:
- SiR104LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
214,26 kr
(exkl. moms)
267,82 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 06 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 10,713 kr | 214,26 kr |
| 100 - 180 | 10,489 kr | 209,78 kr |
| 200 - 480 | 8,26 kr | 165,20 kr |
| 500 - 980 | 7,527 kr | 150,54 kr |
| 1000 + | 7,336 kr | 146,72 kr |
*vägledande pris
- RS-artikelnummer:
- 204-7222
- Tillv. art.nr:
- SiR104LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiR104LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.26mm | |
| Width | 1.12 mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiR104LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.26mm | ||
Width 1.12 mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
relaterade länkar
- Vishay SiR104LDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR870BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3
- Vishay SiDR104ADP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR104ADP-T1-RE3
- Vishay SiR870BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiDR104ADP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3