Vishay SiHG105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SIHG105N60EF-GE3

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178,53 kr

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223,16 kr

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5 - 2035,706 kr178,53 kr
25 - 4530,352 kr151,76 kr
50 - 12028,582 kr142,91 kr
125 - 24526,836 kr134,18 kr
250 +24,998 kr124,99 kr

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Förpackningsalternativ:
RS-artikelnummer:
204-7209
Tillv. art.nr:
SIHG105N60EF-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

SiHG105N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

208W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

5.21 mm

Length

15.87mm

Standards/Approvals

No

Height

20.7mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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