Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
- RS-artikelnummer:
- 204-7207
- Tillv. art.nr:
- SIHG052N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
402,19 kr
(exkl. moms)
502,74 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 80,438 kr | 402,19 kr |
| 10 - 20 | 72,396 kr | 361,98 kr |
| 25 - 45 | 68,388 kr | 341,94 kr |
| 50 - 120 | 64,356 kr | 321,78 kr |
| 125 + | 59,516 kr | 297,58 kr |
*vägledande pris
- RS-artikelnummer:
- 204-7207
- Tillv. art.nr:
- SIHG052N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHG052N60EF | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHG052N60EF | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
relaterade länkar
- Vishay SiHG052N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay Type N-Channel MOSFET 600 V Enhancement, 3-Pin Super-247 SiHFPS38N60L-GE3
- Vishay Type N-Channel MOSFET 600 V Enhancement, 3-Pin Super-247 SIHFPS40N60K-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG70N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3
- Vishay SiHG039N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SIHG039N60EF-GE3