onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1
- RS-artikelnummer:
- 202-5738
- Tillv. art.nr:
- NVH4L040N120SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 förpackning med 2 enheter)*
299,80 kr
(exkl. moms)
374,76 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 + | 149,90 kr | 299,80 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5738
- Tillv. art.nr:
- NVH4L040N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 170°C | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 170°C | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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