onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1
- RS-artikelnummer:
- 202-5735
- Tillv. art.nr:
- NVH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
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473,87 kr
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592,34 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 473,87 kr |
| 10 - 99 | 408,46 kr |
| 100 + | 354,14 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5735
- Tillv. art.nr:
- NVH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 510W | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 510W | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Height 22.74mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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