onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1
- RS-artikelnummer:
- 202-5735
- Tillv. art.nr:
- NVH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
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473,87 kr
(exkl. moms)
592,34 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 473,87 kr |
| 10 - 99 | 408,46 kr |
| 100 + | 354,14 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5735
- Tillv. art.nr:
- NVH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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