onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247

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RS-artikelnummer:
202-5739
Tillv. art.nr:
NVH4L080N120SC1
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NVH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Height

22.74mm

Width

5.2 mm

Standards/Approvals

RoHS

Length

15.8mm

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.

AEC Q101 qualified

100% avalanche tested

Low effective output capacitance

RoHS compliant

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