onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1
- RS-artikelnummer:
- 202-5743
- Tillv. art.nr:
- NVH4L160N120SC1
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
428,40 kr
(exkl. moms)
535,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 10 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 85,68 kr | 428,40 kr |
| 50 + | 73,876 kr | 369,38 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5743
- Tillv. art.nr:
- NVH4L160N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 4V | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 4V | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
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