onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247

Se alla MOSFETs

Antal (1 rör med 450 enheter)*

49 175,55 kr

(exkl. moms)

61 469,55 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 450 enhet(er), redo att levereras
Enheter
Per enhet
Per Rør*
450 +109,279 kr49 175,55 kr

*vägledande pris

RS-artikelnummer:
202-5698
Tillv. art.nr:
NTH4L040N120SC1
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

319W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

106nC

Forward Voltage Vf

3.7V

Maximum Operating Temperature

175°C

Width

5.2 mm

Height

22.74mm

Standards/Approvals

RoHS

Length

15.8mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

relaterade länkar