onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247

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Antal (1 rör med 450 enheter)*

49 175,55 kr

(exkl. moms)

61 469,55 kr

(inkl. moms)

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450 +109,279 kr49 175,55 kr

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RS-artikelnummer:
202-5698
Tillv. art.nr:
NTH4L040N120SC1
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

319W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

106nC

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

3.7V

Maximum Operating Temperature

175°C

Width

5.2 mm

Length

15.8mm

Height

22.74mm

Standards/Approvals

RoHS

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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