onsemi NTHL Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NTHL027N65S3HF
- RS-artikelnummer:
- 195-2497
- Tillv. art.nr:
- NTHL027N65S3HF
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
416,08 kr
(exkl. moms)
520,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 20 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 208,04 kr | 416,08 kr |
| 20 + | 179,37 kr | 358,74 kr |
*vägledande pris
- RS-artikelnummer:
- 195-2497
- Tillv. art.nr:
- NTHL027N65S3HF
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Maximum Power Dissipation Pd | 595W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Maximum Power Dissipation Pd 595W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
relaterade länkar
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL019N65S3H
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
